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5N200 STX112 2SA1963 KRM02 F38347 1SS133 OX9741 HC1228W
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  Datasheet File OCR Text:
 25 20
10 -8V -3.0V -1.5V 8 Vds=-5V
-Id (A)
-Id (A)
15 10
-2.0V
6 125C 4 25C
5 0 0 1 2 3
Vgs=-1.0V
2
0 4 5 0.2 0.4 0.6 0.8 1 1.2 1.4 -Vds (Volts) Fig 1: On-Region Characteristics -Vgs (Volts) Figure 2: Transfer Characteristics 1.6
30
Rds(on) (m:)
25
Vgs=-1.8V
Normalized On-Resistance
Id=-6A, Vgs=-2.5V 1.4 Id=-5A, Vgs=-1.8V
20
Vgs=-2.5V
1.2
Id=-7A, Vgs=-4.5V
15 Vgs=-4.5V 10 0 2 4 6 8 10 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
1.0
0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
50 45 40 Id=-7A
1E+01 1E+00 1E-01 125C
Rds(on) (m:)
-Is (A)
35 30 25 20 15 10 0 2 4 6 8 -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 125C
25C 1E-02 1E-03 1E-04 1E-05 0.0 0.2 0.4 0.6 0.8 1.0 -Vsd (Volts) Figure 6: Body-Diode Characteristics
5 4 Vds=-10V Id=-7A
6400 5600 Ciss
Capacitance (pF)
4800 4000 3200 2400 1600 800 Crss 0 5 Coss
-Vgs (Volts)
3 2 1 0 0 5 10 15 20 25 30 35 40 45 -Qg (nC) Figure 7: Gate-Charge Characteristics
0 10 15 20 -Vds (Volts) Figure 8: Capacitance Characteristics
100.0
Tj(max)=150C Ta=25C Rds(on) limited 10Ps 100Ps 1ms 10ms
40 Tj(max)=150C Ta=25C 30
-Id (Amps)
Power (W)
10.0
20
1.0 1s 10s DC 0.1 0.1 1 -Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 0.1s
10
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10
ZTja Normalized Transient Thermal Resistance
D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=90C/W 1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1 Single Pulse 0.01 0.00001
Pd Ton
T
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance


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